Application and Benefits
Value-Added Benefits Of Submicron Thermal Imaging With Ultrafast Transient Response
Thermal Characterization & Thermal Profiling
Key Benefits
2D and 3D imaging
Spatial resolution to 290 nm
Time resolution to <800 ps
Temperature resolution to 0.1 °C
Ensure long-term device reliability with optimal performance
Application & Tech Note(s)
TN-003 Characterizing Non-Uniform Temperature & Current Distributions in SCR for ESD Protection
TN-004 Thermal Characterization of High Power In-Line MOSFET Transistor Arrays
Time-Dependent Thermal Analysis
Key Benefits
Characterize high speed logic circuits & analyze other time-dependent thermal effects
Nano-sec to pico-sec transient analysis for ultrafast switching devices & circuits
Application & Tech Note(s)
AN-006 Analysis of Time-Dependent Thermal Events in High Speed Logic Integrated Circuits
GaN HEMT Device Example
Flip Chip Thermal Analysis
Key Benefits
In SITU thru-the-substrate imaging
Heat sinking integrity
Pin-point thermal sources by observing thermal time delay
Link emission & thermal images
Application & Tech Note(s)
AN-007 Through-the-Substrate Imaging Enables Flip-Chip Thermal Analysis
Hot Spot Detection & Failure Analysis
Key Benefits
Locate, Analyze, & Fix:
Short circuits
Oxide defects
Junction defects
High resistance bias
Processing defects, etc.
Application & Tech Note(s)
AN-005 Detecting Hot-Spots and Other Thermal Defects on a Sub-Micron Scale in Electronic and Optoelectronic Devices
TN-002 Locating Defects in GaAs & GaN Sub-Micron High Electron Mobility Transistors (HEMTs)
Sub Micron Hotspot Detection and Failure Analysis
What is it?
Thermoreflectance Imaging
Thermoreflectance thermal imaging is dependent on the measurement of the relative change in the sample’s surface reflectivity as a function of temperature. As the temperature of the sample changes, the refractive index, and therefore, the reflectivity also changes. The change in reflectivity is dependent on the Thermoreflectance Coefficient, a basic material property that is a function of the illumination wavelength, the sample material and material surface characteristics, and the ambient temperature.
With illumination wavelengths in the visible range, a lock-in technique to enhance signal to noise ratio, and advanced embedded algorithms for data analysis the Microsanj thermal imaging systems surpass traditional thermal imaging techniques achieving:
Spatial resolution less than 300 nanometers
Transient resolution less than 1 nanosecond
Temperature resolution to 0.25 ⁰C
Microsanj is a leading supplier of thermal imaging systems based on the Thermoreflectance principal. Shrinking device dimensions and complex 3-dimensional architectures have greatly exacerbated the ability to thermally analyze today’s state-of-the-art microelectronic and optoelectronic devices, information critical for ensuring device performance and long term reliability. Microsanj has carefully engineered and configured their systems to be cost-effective solutions with the attributes and resolution necessary to meet the thermal imaging challenges of these advanced devices.
Thermoreflectance is the change in reflected light due to a change in temperature. Thermoreflectance is not based on IR emission to obtain a thermal image. We can probe a device with visible light and measure the change in reflected intensity with high spatial and temporal resolution.